fds6670as 30v n - channel powertrench syncfet ? general description the fd s6670as is designed to replace a single so-8 mosfet and schottky diode in synchronous dc:dc power supplies. this 30v mosfet is designed to maximize power conversion efficiency, providing a low r ds(on) and low gate cha rge. the fds6670as includes an integrated schottky diode using fairchild?s monolithic syncfet technology. applications dc/dc convert er low side notebook features 13.5 a, 30 v. r ds(on) max= 9.0 m @ v gs = 10 v r ds(on) max= 11.5 m @ v gs = 4.5 v includes syncfet schottky body diode low gate charge (27nc typical) high performance trench technology for extremely low r ds(on) and fast sw itching high power and current handling capability s d s s so- 8 d d d g 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherw ise noted symbol parameter ratin gs units v dss drain-sou rce voltage 30 v v gss gate-source volt age 20 v i d drain current ? continuous (note 1a) 13.5 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1 w t j , t stg operating and st orage junction temperatu re range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r jc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information dev i ce marking device reel size tape width quantity fds6670as fds6670as 13?? 12mm 2500 units fds667 0as 30v n-channel po wert rench ? syncfet? rohs compliant ?2010 fairchil d s emiconductor corporation fds6670as rev. c1 www.fairchildsemi.com 1 july 2010
electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characte ristics bv dss drain?source br eakdo wn voltage v gs = 0 v, i d = 1 ma 30 v bv dss t j breakdow n volta ge temperature coefficient i d = 10 ma, referenced to 25 c 27 mv/ c i dss zero gate voltag e drain current v ds = 24 v, v gs = 0 v 500 a i gss gate?body le akage v gs = 20 v, v ds = 0 v 100 na on charac te ristics (note 2) v gs(t h ) gate threshold voltage v ds = v gs , i d = 1 ma 1 1.7 3 v v gs(t h ) t j gate threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c ? 4 r ds(on) static drain?source on?resistance v gs = 10 v, i d = 13.5 a v gs = 4.5 v, i d = 11.2 a v gs =10 v, i d =13.5a, t j =125 c 7.5 9 10 9 11.5 12.5 m i d(on) on?state drain curre nt v gs = 10 v, v ds = 5 v 50 a g fs forwa rd transconductance v ds = 10 v, i d = 13.5 a 66 s dy namic characteristics c iss input capacitanc e 1540 pf c oss output capacita nce 440 pf c rss reverse tra nsfe r capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 160 pf sw i tching characteristics (note 2) t d(on) turn?on d elay time 10 20 ns t r turn? on rise ti me 5 10 ns t d ( off ) turn?off d elay time 27 44 ns t f turn?off fall time v ds = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 18 32 ns t d(on) turn?on d elay time 13 23 ns t r turn?on rise ti me 15 27 ns t d ( off ) turn? off d elay time 24 38 ns t f turn?off fall time v ds = 15 v, i d = 1 a, v gs = 4.5 v, r gen = 6 13 23 ns q g( to t) total gat e cha rge at vgs=10v 27 38 nc q g total gat e cha rge at vgs=5v 16 22 nc q gs gate?source ch arge 4.2 nc q gd gate?drain cha rge v dd = 15 v, i d = 13.5 a, 5.1 nc mv/ c fds667 0as 30v n-channel po wert rench ? syncfet? r g 4.2 ?2010 fairchil d s emiconductor corporation www.fairchildsemi.com 2 fds6670as re v. c1 2.1 gate resistance
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain?source diode characteristics and maximum ratings v sd drain?source diode forward voltage v gs = 0 v, i s = 3.5 a (note 2) v gs = 0 v, i s = 7 a (note 2) 0.5 0.6 0.7 v t rr diode reverse recovery time 20 ns q rr diode reverse recovery charge i f = 13.5a, d if /d t = 300 a/s (note 3) 15 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 50c/w when mounted on a 1 in 2 pad of 2 oz copper b) 105c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. see ?syncfet schottky body diode characteristics? below. fds667 0as 30v n-channel powertrench ? syncfet? ?2010 fairchild s emiconductor corporation www.fairchildsemi.com 3 fds6670as rev. c1
typical characteristics 0 10 20 30 40 50 00 . 511 . 52 v ds , drain-source voltage (v) i d , drain current (a) 4.5v 4.0v 3.5v v gs = 10v 6.0v 3.0v 2.5v 0.6 1 1.4 1.8 2.2 2.6 0 1020304050 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.0v 6.0v 10v 4.0v 4.5v 3.5v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 13.5a v gs = 10v 0.005 0.01 0.015 0.02 0.025 24681 0 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 6.75a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 11.522.533.5 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds667 0as 30v n-channel powertrench ? syncfet? ?2010 fairchild s emiconductor corporation www.fairchildsemi.com 4 fds6670as rev. c1
typical characteristics (continued) 0 2 4 6 8 10 0 5 10 15 20 25 30 q g , gate charge (nc) v gs , gate-source voltage (v) i d =13.5a v ds = 10v 15v 20v 0 600 1200 1800 2400 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge character istics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 s r ds(on) limit v gs = 10v single pulse r ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 125 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds667 0as 30v n-channel powertrench ? syncfet? ?2010 fairchild s emiconductor corporation www.fairchildsemi.com 5 fds6670as rev. c1
typical characteristics (continued) syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 12 shows the reverse recovery characteristic of the fds6670as. figure 12. fds6670as syncfet body diode reverse recovery characteristic. for comparison purposes, figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size mosfet produced without syncfet (fds6670a). figure 13. non-syncfet (fds6670a) body diode reverse recovery characteristic. schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. this will increase the power in the device. 0.00001 0.0001 0.001 0.01 0.1 0 10 20 30 v ds , reverse voltage (v) i dss , reverse leakage current (a) 100 o c 25 o c 125 o c figure 14. syncfet b ody diode reverse leakage versus drain-source voltage and temperature. time : 12.5ns/div current : 0.4a/div time : 12.5ns/div current : 0.4a/div fds667 0as 30v n-channel powertrench ? syncfet? ?2010 fairchild s emiconductor corporation www.fairchildsemi.com 6 fds6670as rev. c1
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syncfet? fds6670as rev. c1
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